SEOUL, South Korea / RankWire.AI / – Samsung Electronics introduced its innovative memory and storage approach designed for artificial intelligence infrastructure at the 2026 OCP Global Summit. The company shared its plans during the event held in San Jose, California, from October 12 to 15. The announcement included three technological pathways focusing on high-performance memory, Compute Express Link-based memory expansion, and upcoming solid-state drives. Additionally, Samsung announced a joint CXL demonstration with Advanced Micro Devices. The overarching goal of this strategy is to overcome memory limitations that hinder larger AI workloads.
Samsung centered its strategy around enhancing speed, increasing memory scalability, and improving data persistence. The first pillar emphasizes high-performance memory, with the company showcasing customized high-bandwidth memory and the eighth-generation HBM5. The second pillar leverages CXL technology to expand memory capacity beyond what current server configurations provide. The third area concentrates on data storage and management through next-generation enterprise SSDs and advanced storage software. Samsung claims these three elements work synergistically to boost overall AI system efficiency.
The company linked this strategy to the increasing memory demands driven by AI inference workloads and larger models. As models expand, they generate more data during inference, requiring greater memory capacity. Many existing server designs limit the available memory per processor. Samsung proposes CXL as a solution to surpass these constraints without the need for complete system redesigns. The firm also emphasized key-value cache optimization, which allows AI models to reuse data already processed, reducing redundant computations.
Samsung and AMD showcase joint CXL memory expansion at summit
At the event, Samsung and AMD demonstrated a CXL-based memory expansion solution that enables processors to share memory resources and flexibly scale capacity across AI systems. Samsung confirms that the solution has been validated within real system environments. The two companies signed a memorandum of understanding in March 2026, focusing on next-generation AI memory and computing innovations. Additionally, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss collaborations in memory and foundry technology.
Samsung also displayed its CMM-D, a CXL-enabled DRAM memory module configured for memory pooling. This setup connects multiple CXL memory units into a shared pool that various systems can draw from as needed. Other exhibits included processing-in-memory technology, which performs certain calculations within memory chips to reduce data transfer. Samsung showcased 2-nanometer gate-all-around wafers and Groq LPU wafers, with Nvidia’s Groq 3 LPX system also appearing among the company’s exhibits.
Partners gain early access to validated memory solutions
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, outlined the strategy. He emphasized that expanding memory capacity and bandwidth is becoming increasingly critical as AI models grow in size and inference workloads intensify. Shim also noted that Samsung is advancing co-design and technical validation efforts with global partners early in development, aiming to ensure memory products meet customer system needs prior to commercial release.
Samsung MAX Lab supports this initiative by allowing clients to test memory and storage solutions under real AI workloads. This enables validation of technologies like PIM and next-generation SSDs before they reach the market. The company participated in the summit as a Diamond Sponsor of the Open Compute Project event. This appearance followed Samsung’s presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. Samsung continues to position memory capacity as a key factor in enhancing AI infrastructure performance.